The landscape of high-voltage power design is undergoing a massive transformation. Renesas Electronics Corporation has officially launched the industry’s very first Renesas bidirectional GaN switch, utilizing advanced depletion-mode (d-mode) technology. This groundbreaking component, designated as the TP65B110HRU, is uniquely capable of blocking both positive and negative currents within a single device, featuring fully integrated DC blocking.
For hardware engineers and procurement specialists reading AarokaTech, this launch represents a major leap forward in component efficiency. Targeted specifically at high-demand applications like single-stage solar microinverters, artificial intelligence data centers, and onboard electric vehicle (EV) chargers, this new GaN device dramatically simplifies power converter architectures. By replacing traditional back-to-back FET switches with a single, low-loss, and fast-switching device, Renesas is setting a new standard for power density.
How Single-Stage Topology Boosts Efficiency and Cuts Costs
Historically, high-power conversion designs have relied heavily on unidirectional silicon or silicon carbide (SiC) switches. Because these conventional switches can only block current in one direction when turned off, engineers have been forced to divide power conversion into multiple stages using complex, switched bridge circuits.
Take a typical solar microinverter as an example. Traditional designs require a four-switch full bridge for the initial DC-to-DC conversion stage, followed by an entirely separate second stage to produce the final AC grid output. To achieve a single-stage conversion using older technology, designers had to wire unidirectional switches back-to-back. This workaround resulted in a frustrating four-fold increase in component count and a noticeable drop in overall energy efficiency.
The introduction of the Renesas bidirectional GaN switch changes this dynamic entirely. By building bidirectional blocking directly into a single GaN product, power conversion can now happen in just one stage with far fewer switching devices. In a real-world solar microinverter setup, engineers only need two of these high-voltage SuperGaN® devices. This innovation eliminates the need for intermediary DC-link capacitors and slashes the switch count by 50 percent. Furthermore, the inherent speed of GaN technology enables higher switching frequencies, ultimately demonstrating a remarkable power efficiency of over 97.5% in practical applications.
Combining Robust Performance with Silicon-Compatible Drivers
Reliability and ease of integration are critical factors for modern B2B manufacturing. The 650V SuperGaN devices from Renesas are built on a field-proven, proprietary normally-off technology that is incredibly robust.
The TP65B110HRU package intelligently combines the high-voltage bidirectional d-mode GaN chip with two low-voltage silicon MOSFETs. This setup provides a high threshold voltage of 3V, a generous high gate margin of ±20V, and built-in body diodes for highly efficient reverse conduction.
Unlike enhancement-mode (e-mode) GaN alternatives, this specific Renesas bidirectional GaN switch is fully compatible with standard, off-the-shelf gate drivers that do not require negative gate bias. For design teams, this translates directly to a simpler, significantly lower-cost gate loop design. It ensures stable, fast switching across both soft and hard switching operations without sacrificing performance. Topologies that demand rigorous hard switching, like the Vienna-style rectifier, benefit immensely from the chip’s high dv/dt capability (exceeding 100 V/ns), experiencing minimal ringing and drastically shortened delays during transition states.
“Extending our SuperGaN technology to the bidirectional GaN platform marks a major shift in power conversion design norms,” stated Rohan Samsi, Vice President of the GaN Business Division at Renesas. “Customers can now achieve higher efficiency with fewer switching components, smaller PCB area and lower system cost.”
Key Specifications of the TP65B110HRU
For technical evaluation, the new switch offers a highly competitive spec sheet:
- Voltage Ratings: ±650V continuous peak AC and DC rating, alongside an ±800V transient rating.
- ESD Protection: 2kV Human Body Model rating (HBM and CDM).
- Resistance: 110 mΩ typical RSS,ON at 25⁰C.
- Gate Threshold: 3V typical Vgs(th) with no negative drive requirement and a ±20V maximum Vgs.
- Immunity: >100 V/ns dv/dt immunity.
- Diode Drop: 1.8V, VSS,FW freewheeling diode voltage-drop.
- Packaging: TOLT top-side cooled package featuring an industry-standard pin-out for easy integration.
Availability and Winning Combinations
The TP65B110HRU bidirectional GaN switch is currently available for volume purchasing. To assist with rapid prototyping, Renesas is also offering the RTDACHB0000RS-MS-1 evaluation kit, allowing engineering teams to test various drive options, detect AC zero crossings, and implement zero-voltage switching (ZVS).
Furthermore, Renesas has released pre-vetted “Winning Combinations,” including a 500W Solar Microinverter and a Three-Phase Vienna Rectifier System. These technically validated system architectures combine the new switch with compatible portfolio devices to drastically reduce R&D risk and accelerate time-to-market.
Industry professionals can currently see this technology in action, as Renesas is showcasing the solution at booth #1219 during the Applied Power Electronics Conference (APEC) in San Antonio, Texas.
