Integrating GaN-based power solutions into modern semiconductor architectures has become a top priority for hardware engineers seeking to push the boundaries of energy efficiency. Mouser Electronics, a leading global authorized distributor of electronic components, has officially announced a worldwide distribution agreement with Efficient Power Conversion (EPC). EPC is a recognized global pioneer in enhancement-mode gallium nitride (eGaN) technology, offering a robust portfolio of devices spanning from 15 V up to 350 V.
This strategic partnership is engineered to expand global access to next-generation GaN technology, allowing electronics manufacturers to completely rethink power density and thermal management in their system designs.
The Paradigm Shift: Outperforming Traditional Silicon
For decades, silicon (Si) power MOSFETs have been the industry standard for power management and switching applications. However, as demands for higher power density and miniaturization intensify—especially in factory automation and automotive sectors—silicon is reaching its theoretical performance limits.
EPC’s eGaN Field-Effect Transistors (FETs) and integrated circuits deliver switching performance that dramatically outpaces the best-in-class silicon alternatives. GaN-based power solutions offer ultra-low capacitance and zero reverse recovery, attributes that enable highly efficient operations across various circuit topologies.
By utilizing GaN, engineers can achieve significantly higher switching frequencies. This enhancement reduces the required size of passive components, such as inductors and capacitors, leading to smaller, lighter, and more cost-effective end products. These benefits are particularly critical for modern applications like DC-DC converters, lidar-based remote sensing, e-mobility motor control, and advanced drone robotics.
Exploring the EPC Product Portfolio at Mouser
Through this distribution agreement, Mouser Electronics is now stocking an extensive array of EPC’s cutting-edge components. Below is a deep dive into the high-performance eGaN products now available to the global engineering community:
1. EPC2302: High-Frequency eGaN Power Transistor
The EPC2302 is a 100 V eGaN power transistor featuring a maximum RDS(on) of just 1.8 mΩ. Housed in a low-inductance 3 x 5 mm QFN package, it is specifically optimized for high-frequency DC-DC applications operating between 40 V and 60 V, as well as 48 V BLDC motor drives.
- Thermal Management: The device features an exposed top for superior heat dissipation.
- Manufacturing Efficiency: Side-wettable flanks ensure the entire side pad surface is soldered during reflow, protecting the copper and allowing for automated optical inspection (AOI).
2. EPC2304: Designed for Ultra-High Switching
Engineered for scenarios where ultra-high switching frequencies and minimal on-time are paramount, the EPC2304 excels in environments where on-state losses typically dominate. Packaged in a thermally enhanced 3 x 5 mm QFN format with ultra-low thermal resistance, it is ideal for wireless power systems, Class-D audio amplifiers, power factor correction (PFC) converters, and precise motor drives.
3. EPC23102: Monolithic ePower Stage IC
The EPC23102 represents a leap forward in system integration. Utilizing proprietary GaN IC technology, this monolithic integrated circuit combines an input-logic interface, high-side level shifting, synchronous bootstrap charging, gate drivers, and eGaN output FETs into a single MSL1 QFN package. This power stage IC seamlessly translates logic-level control signals into a high-voltage, high-current output. This makes designs inherently simpler, more compact, and substantially easier to manufacture for half-bridge and full-bridge LLC converters.
4. EPC2305: High Power Density for Consumer and Industrial Edge
Operating at 150 V, the EPC2305 delivers significantly lower switching and gate driver losses compared to top-tier Si MOSFETs. This efficiency spike translates directly to superior power density. Typical target applications for the EPC2305 span from consumer electronics—such as notebooks, gaming PCs, and mobile phones—to heavy-duty uses in solar energy inverters, power tools, and home robotics.
Empowering the Global Engineering Community
The transition from silicon to GaN requires reliable supply chains and robust technical support. This partnership merges EPC’s semiconductor breakthroughs with Mouser’s unparalleled logistical reach.
Nick Cataldo, Senior VP of Sales & Marketing at EPC, emphasized the strategic nature of the deal: “This global agreement with Mouser is part of our distribution strategy to engage with more engineers who are looking at designing with GaN because of the benefits it offers over silicon. Mouser has a fantastic global reach, and we are excited to be partnering with such a dynamic company.”
Heather McGriff, Vice President of Supplier Management for Mouser, echoed this sentiment, noting that EPC’s portfolio perfectly aligns with current customer demands for innovative technologies.
As an authorized distributor, Mouser guarantees 100% certified, genuine products that are fully traceable. To further accelerate the B2B design process, Mouser provides an expansive Technical Resource Centre complete with product data sheets, reference designs, and engineering tools, ensuring that developers integrating GaN-based power solutions have the critical data they need to launch their next-generation platforms.
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