The rapid evolution of artificial intelligence has created an unprecedented demand for robust and highly efficient power infrastructure. Meeting this critical demand, the Infineon 24 kW SiC BBU reference design emerges as a transformative solution for the enterprise hardware industry. Unveiled recently in Munich, Germany, this innovative DC-DC battery backup unit is specifically engineered to support high-voltage (HV) DC bus architectures within modern AI data centers.
By operating directly from a battery stack to an 800 V DC bus, the system utilizes advanced 650 V and 1200 V silicon carbide (SiC) technology to bridge the gap between heavy computational loads and reliable energy management.
Addressing the High-Voltage AI Power Challenge
As we frequently cover here at AarokaTech, the shift toward higher-voltage DC distribution is an undeniable trend in the semiconductor and data center space. Facility managers are constantly fighting infrastructure bottlenecks and thermal limitations. The new Infineon architecture achieves a remarkable power density of 450 W/in³ and pushes energy efficiency levels beyond the 99 percent mark.
Crucially, it manages to deliver these superior metrics while maintaining the exact same physical form factor as traditional low-voltage BBU implementations. This means data center operators can seamlessly upgrade their backup power capabilities without overhauling their existing rack space or compromising on physical density.
According to Magdalene Boebel, Senior Vice President and Business Line Head of Power System ICs at Infineon, powering AI at scale requires a highly systemic approach. Every single stage of the power delivery chain must be optimized, from the initial grid connection all the way down to the processor core. The Infineon 24 kW SiC BBU sets a completely new benchmark in this sector, providing data center architects with a fully integrated, scalable solution capable of handling the most demanding AI workloads.
Deep Dive into the Multi-Level Architecture
The technical foundation of this reference design is a multi-level, multiphase non-isolated architecture. It intelligently combines stacked, interleaved, and coupled boost and buck stages. This specialized approach directly reduces the volume of magnetic components without having to rely on flying capacitors, which can often complicate board layouts.
Furthermore, a shared switching-leg topology establishes a common current path between the charging and discharging stages. This allows for zero-voltage switching (ZVS) across the entire operating range. For data center operators, the outcome is highly beneficial: reduced current ripple, fully integrated magnetics, and an incredibly fast transient response. These specific characteristics are becoming increasingly critical because the power draw of AI servers is notoriously dynamic and much less predictable than traditional cloud computing workloads.
Despite its massive power output, the module is incredibly compact, measuring just 112 x 88 x 118 mm. It integrates the primary 24 kW main power stage alongside a 2.4 kW auxiliary supply. By allowing the charger and discharger blocks to share the EMI filter, capacitors, and protection MOSFETs, Infineon has successfully reduced the total component count. Additionally, best-in-class SiC junction gate field-effect transistors (JFETs) provide essential ORing and hot-swap capabilities, while a planar transformer combined with CoolSET™ technology implements the auxiliary SMPS in a cost-efficient footprint.
The Power of CoolSiC™ Technology
At the heart of the DC-DC conversion stage is the CoolSiC™ MOSFET IMT65R033M2H. This 650 V device is stringently qualified for bidirectional buck-boost DC-DC operation in high-voltage BBU applications. Its exceptionally low conduction and switching losses are what support stage efficiencies higher than 99 percent, drastically reducing the thermal load at the rack level.
During unexpected grid disturbances, generator switchovers, or complete power outages, this device rapidly transfers energy between the HV DC bus and the backup battery with minimal energy loss. It extends the critical hold-up time reliably. The device features a 650 V breakdown rating, a robust body diode, a 175 °C junction temperature rating, and advanced .XT packaging technology. This ensures extreme resilience under voltage spikes, high dv/dt transients, and continuous thermal cycling.
Complete Bill of Materials and System Integration
The complete bill of materials for this reference design showcases the depth of Infineon’s ecosystem. It comprises the CoolSiC MOSFET 650 V Generation 2 (including the IMT65R033M2H), EiceDRIVER™ gate drivers, TLE497x current sensors, the PSOC™ Performance line MCU, the CoolSET IC for the auxiliary SMPS, and a robust 1.7 kV SiC MOSFET.
Mechanically, the design is highly optimized. Three specialized power cards provide the necessary electrical connections for the DC positive, DC negative, and midpoint rails, while simultaneously acting as structural elements for the entire assembly. This dual-purpose design contributes significantly to the overall compactness of the solution.
Shaping the Future of AI Data Centers
The industry-wide transition to higher-voltage DC bus architectures is primarily driven by the urgent need for efficiency and the reduction of distribution losses at both the rack and facility scale. Battery backup units are a foundational component of this massive infrastructure shift, ensuring continuous, stable power delivery to AI servers during unpredictable grid events.
This reference design perfectly demonstrates how SiC-based DC-DC conversion can seamlessly meet the strict density, efficiency, and reliability requirements of this transition. With a comprehensive portfolio spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), Infineon is perfectly positioned to cover the full power delivery chain.
Availability and PCIM Europe 2026 Showcase
Industry professionals looking to integrate these advancements can find more information about the battery backup unit solutions, including full technical documentation and reference design details, on Infineon’s official website. Furthermore, Infineon will be presenting its latest products and solutions for decarbonization and digitalization at PCIM Europe, taking place in Nuremberg, Germany, from June 9 to 11, 2026.
